Display device and method of manufacturing the same

ABSTRACT

Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.

BACKGROUND OF THE INVENTION

The present invention relates to a display device, and moreparticularly, to an active matrix type display device and a method ofmanufacture thereof.

In a typical liquid crystal display device, on a liquid-crystal-sidesurface of one of a pair of transparent substrates, which are arrangedto face each other in an opposed manner with a liquid crystal materialdisposed therebetween, gate signal lines extend in the x direction andare arranged in parallel in the y direction and drain signal linesextend in the y direction and are arranged in parallel in the xdirection, and respective regions surrounded by these signal linesdefine pixel regions.

On each pixel region, there is at least a thin film transistor, which isoperated in response to scanning signals from a one-side gate signalline and a pixel electrode to which video signals are supplied from aone-side drain signal line through the thin film transistor. The pixelelectrode generates an electric field between the pixel electrode and acounter electrode thus controlling the light transmittivity of theliquid crystal material. Further, as the thin film transistor, atransistor has been employed which uses a semiconductor layer which isreferred to as a so-called a low-temperature polysilicon (p-Si) layer.Such a thin film transistor can be formed by a low temperature processat a temperature of not more than approximately 450° C.

There is a known liquid crystal display device in which a scanningdriving circuit, which supplies scanning signals to the gate signallines, and a video driving circuit, which supplies video signals to thedrain signal lines, are formed on one of the above-mentioned substrates.Each driving circuit is comprised of a large number of complementary MIStransistors, because these MIS transistors can be formed along with theformation of the above-mentioned thin film transistors. As theconstitution of such thin film transistors, the constitution which isdisclosed in Japanese Laid-open Patent publication 163366/1999 has beenknown, for example.

With respect to a thin film transistor having such a constitution,so-called LDD (Lightly Doped Drain) regions are formed respectivelybetween a channel region thereof and drain and source regions, which areformed at both sides of the channel region, and the widths of respectiveLDD regions are made uniform so as to make the magnitude of ON currentsuniform.

These LDD regions are regions which are doped with an impurity having aconcentration lower than the concentration of the impurity doped intothe drain and source regions. The LDD regions are formed to alleviatethe concentration of an electric field at these portions.

However, with respect to such a thin film transistor, no considerationhas been given to the film thickness of an insulation film (functioningas a gate insulation film) which covers a channel region, an LDD regionand the drain and source regions thereof Accordingly, it has beenpointed out that the areas of the tapered surfaces of contact holescannot be reduced, so that the numerical aperture cannot be enhanced, orthere arises a defect with respect to the coating ability of aninterlayer insulation film due to the formation of a stepped portion inthe periphery of a gate electrode of the thin film transistor.

The present invention has been made in view of such circumstances asdescribed above, and it is an object of the present invention to providea display device which can enhance the numerical aperture and canresolve defects which occur in a periphery of a gate electrode of a thinfilm transistor.

Further, it is another object of the present invention to provide amethod of fabricating a display device which can reduce the voltagenecessary for ion implantation of an impurity at the time of forming thethin film transistors.

SUMMARY OF THE INVENTION

A summary of typical examples of the invention described in thisspecification will be presented.

That is, a display device according to the present invention ischaracterized in that, for example, a thin film transistor is formed inpixel regions over at least one of a pair of substrates, which arearranged to face each other in an opposed manner with a liquid crystalmaterial being disposed therebetween. Each thin film transistor includesa semiconductor layer made of polysilicon, which is comprised of achannel region, drain and source regions arranged at both sides of thechannel region and doped with an impurity of high concentration, and atleast an LDD region arranged between the drain region and the channelregion and between the source region and the channel region, or betweenthe drain region and the channel region, and doped with impurity of lowconcentration; an insulation film which is formed over an upper surfaceof the semiconductor layer and respectively sequentially decreases infilm thickness thereof in a step-like manner as the insulation film isextended to the channel region, the LDD region, the drain and the sourceregion or the drain region; and a gate electrode which is formed overthe channel region through the insulation film.

In a display device having such a constitution, the film thickness ofthe insulation film on the drain and source regions can be made smallerthan the film thickness of the insulation film on the channel region.

Accordingly, the tapered areas in the contact holes of the insulationfilm, which are formed for drain and source electrodes, can be reducedso that the areas of the respective electrodes can be reduced.Accordingly, the numerical aperture can be enhanced.

Further, since the insulation film can be made by stepped portionsthereof divided in two stages in the course of reaching the drain andsource regions from the channel region, substantially smooth obliquesurfaces can be formed so that the drawbacks derived from the steppedportions can be resolved.

Further, a method of fabricating a display device according to thepresent invention is characterized in that, for example, a thin filmtransistor is formed over an insulation substrate through the followingsteps, comprising a step in which a semiconductor layer made ofpolysilicon, an insulation film and a conductive layer are formed overthe substrate side; a step which uses the conductive film which remainson a channel region and an LDD region and performs ion plantation of animpurity of high concentration using the remaining conductive layer as amask; and a step which uses the conductive film which remains on thechannel region and performs ion plantation of an impurity of lowconcentration using the remaining conductive layer as a mask. A resistfilm, which is used for patterning the conductive layer, which isallowed to remain on the channel region, is formed of a portion obtainedby removing a periphery of the resist film which is used for patterningthe conductive layer that remains on the channel region and the LDDregion, and at the time of making the conductive film that remains onthe channel region and the LDD region and also on the channel region, byusing the conductive film as a mask, a surface of the insulation filmwhich is exposed from the mask is slightly etched.

In the method for fabricating the display device having such aconstitution, at the time of performing ion implantation of the impurityof high concentration and ion implantation of the impurity of lowconcentration, respectively, the film thickness of the insulation filmwhich constitutes a through film is made smaller than the film thicknessof the insulation film formed over the channel region; and, hence, thevoltage necessary for ion implantation can be reduced, so that damage tothe insulation film can be minimized.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows one example of a thin film transistor of a display deviceaccording to the present invention and is a cross-sectional view takenalong a line I-I of FIG. 3;

FIG. 2 is a schematic plan view showing one example of the displaydevice according to the present invention;

FIG. 3 is a plan view showing one example of a pixel of the displaydevice according to the present invention;

FIG. 4A to FIG. 4E are process flow diagrams showing one embodiment of amethod of fabricating a display device according to the presentinvention;

FIG. 5A to FIG. 5D are process flow diagrams showing another embodimentof a method of fabricating a display device according to the presentinvention;

FIG. 6A to FIG. 6F are process flow diagrams showing another embodimentof a method of fabricating a display device according to the presentinvention;

FIG. 7 is a diagram showing a pattern of a gate electrode of a thin filmtransistor manufactured by a step shown in FIG. 5A to FIG. 5D;

FIG. 8A to FIG. 8D are process flow diagrams showing another embodimentof a method of fabricating a display device according to the presentinvention;

FIG. 9A and FIG. 9B are process flow diagrams showing another embodimentof a method of fabricating a display device according to the presentinvention;

FIG. 10A and FIG. 10B are process flow diagrams showing anotherembodiment of a method of fabricating a display device according to thepresent invention;

FIG. 11 is a diagram showing another embodiment of a method offabricating a display device according to the present invention; and

FIG. 12A to FIG. 12G are process flow diagrams showing anotherembodiment of a method of fabricating a display device according to thepresent invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of a display device according to the present invention willbe explained hereinafter in conjunction with the drawings.

Overall Constitutional View

FIG. 2 is an overall constitutional view showing one embodiment of aliquid crystal display device which constitutes one example of thedisplay device according to the present invention. In the drawing, firstof all, the liquid crystal display device is provided with a transparentsubstrate SUB1, and the transparent substrate SUB1 is arranged to face atransparent substrate SUB2 in an opposed manner with a liquid crystalmaterial being disposed therebetween.

The transparent substrate SUB2 is formed to have an area slightlysmaller than the area of the transparent substrate SUB1, and alower-side surface thereof, as seen in the drawing, is coplanar with alower-side surface of the transparent substrate SUB1. Accordingly, withrespect to peripheral portions, excluding the lower side in the drawing,there exist exposed peripheral regions on the substrate SUB1 where thetransparent substrate SUB2 does not cover the substrate SUB. On theliquid-crystal-side surface of the transparent substrate SUB1 in theseexposed peripheral regions, a scanning driving circuit V and a videodriving circuit He, which will be explained later, are formed.

On the liquid-crystal-side surface of the transparent substrate SUB1,gate signal lines GL extend in the x direction in the drawing and arearranged in parallel in the y direction, wherein one end (disposed atthe left side in the drawing) of each of the gate signal lines GL isconnected to the scanning driving circuit V. Further, also on theliquid-crystal-side surface of the transparent substrate SUB1, drainsignal lines DL extend in the y direction in the drawing and arearranged in parallel in the x direction, wherein one end (disposed atthe upper side in the drawing) of each of the drain signal lines DL isconnected to the video driving circuit He.

Respective regions surrounded by respective gate signal lines GL andrespective drain signal lines DL define pixel regions. Each pixel regionis provided with a thin film transistor TFT, which is operated inresponse to scanning signals supplied from one-side gate signal line GL,and a pixel electrode PX to which video signals are supplied from aone-side drain, signal line DL through the thin film transistor TFT. Anelectric field is generated between the pixel electrode PX and a counterelectrode CT, which is formed in common with respective pixel regions onthe liquid-crystal-side surface of the transparent substrate SUB2, thuscontrolling the light transmittivity of the liquid crystal.

With respect to the thin film transistor TFT, a semiconductor layerthereof is formed of a so-called low-temperature polysilicon, forexample. Further, the scanning driving circuit V and the video drivingcircuit He are respectively comprised of a large number of transistorswhich have substantially the same constitution as the thin filmtransistors TFT. These respective transistors also have low-temperaturepolysilicon as the material of the semiconductor layer and are formedalong with the formation of the thin film transistor TFT.

The transparent substrate SUB2 is fixedly secured to the transparentsubstrate SUB1, by a sealing member SL, which also effects sealing ofthe liquid crystal material between the transparent substrates SUB1 andSUB2.

Constitution of Pixel

FIG. 3 is a plan view of one embodiment showing the constitution of onepixel region out of plural pixel regions provided in the display device.Further, FIG. 1 is a cross-sectional view taken along a line I-I in FIG.3.

On the liquid-crystal-side surface of the transparent substrate SUB1,first of all, a semiconductor layer AS made of polysilicon is formed.This semiconductor layer AS is a semiconductor layer which constitutes athin film transistor TFT. The semiconductor layer AS is formed in anL-shaped pattern, for example, as seen in the drawing.

The semiconductor layer AS has one end portion thereof positioned insideof the pixel region surrounded by the gate signal lines GL and the drainsignal lines DL, which will be explained later. Further, thesemiconductor layer AS has the other end portion thereof superposed onthe drain signal line DL. Respective end portions of the semiconductorlayer AS are formed to ensure a relatively large area, thus constitutingcontact portions.

An insulation film GI made of SiO₂ is, for example, formed over thesurface of the transparent substrate SUB1, such that the insulation filmGI also covers the semiconductor layer AS (see FIG. 1). The insulationfilm GI mainly functions as a gate insulation film of the thin filmtransistor TFT and, hence, the film thickness thereof is set to asuitable value (approximately 100 nm) to serve as an insulation film.

Further, the gate signal lines GL, which extend in the x direction andare arranged in parallel in the y direction in the drawing, are formedover the surface of the insulation film GI. The gate signal line GL hasan extension portion which is formed such that the extension portionintersects and sits astride a portion of the semiconductor layer AS,except for both ends of the semiconductor layer AS at a position in thevicinity of the thin film transistor TFT. The extension portionfunctions as a gate electrode GT of the thin film transistor TFT. Inthis embodiment, for example, Mo, Mo alloy (MoW, MoCr), Ti, Ti alloy(Tiw) can be used as material for the gate electrode GT (gate signalline GL).

A capacitance signal line CL, which runs parallel to the gate signallines GL, is formed between the respective gate signal lines GL. Thecapacitance signal line CL is, for example, formed simultaneously withthe formation of the gate signal lines GL. Accordingly, the capacitancesignal line CL is made of the same material as the gate signal lines GL.

A first interlayer insulation film LGI1 made of SiO₂, for example, isformed over the surface of the transparent substrate SUB1 such that thefirst interlayer insulation film LGI1 also covers the gate signal linesGL and the capacitance signal line CL (see FIG. 1).

Contact holes CHI, CH2 are formed in the first interlayer insulationfilm LGI1, wherein the contact hole CH1 exposes a portion of a sourceregion SD1 (region disposed at aside which is connected to the pixelelectrode PX which will be explained later) of the thin film transistorTFT, and the contact hole CH2 exposes a portion of a drain region SD2(region disposed at a side which is connected to the drain signal lineDL which will be explained later) of the thin film transistor TFT.

On an upper surface of the first interlayer insulation film LGI1, thedrain signal lines DL, which extend in the y direction and are arrangedin parallel in the x direction in the drawing, are formed. The drainsignal line DL is formed so as to be connected to the drain electrodeSD2 of the thin film transistor TFT at a portion of the contact holeCH2.

Further, at the time of forming the drain signal lines DL, the sourceelectrode SD1 of the thin film transistor TFT is formed at a portion ofthe contact hole CH1.

Then, on a surface of the transparent substrate SUB1, a secondinterlayer insulation film LGI2 made of SiN, for example, is formed suchthat the second interlayer insulation film LGI2 also covers the drainsignal lines DL and the source electrode SD1. A contact hole CH3 isformed in the second interlayer insulation film LGI2. The contact-holeCH3 exposes a portion of the source electrode SD1 of the thin filmtransistor TFT.

Further, on an upper surface of the second interlayer insulation filmLGI2, the pixel electrode PX made of ITO (Indium-Tin-Oxide) for example,is formed. The pixel electrode PX is formed such that the pixelelectrode PX is disposed adjacent to the gate signal lines GL and thedrain signal lines DL and occupies a major portion of the pixel region.

In the above-mentioned embodiment, gate electrode GT is integrallyformed with the gate signal line GL. However, it is needless to say thatthe gate signal line GL can be made of a material different from thematerial of the gate electrode GT and they may be electrically connectedto each other.

Thin Film Transistor TFT

FIG. 1 shows one embodiment of the thin film transistor TFT and is across-sectional view taken along a line I-I in FIG. 3.

The thin film transistor TFT has the semiconductor layer AS thereof madeof polysilicon. Here, the semiconductor layer AS is formed of an i-typelayer (intrinsic layer: layer which is not doped with conductiveimpurity) which is disposed right below the gate electrode GT, layersdoped with an n-type impurity of relatively low concentration which aredisposed at both sides of the i-type layer, and layers doped with ann-type impurity of relatively high concentration which are disposed atboth sides of the layers doped with the n-type impurity of relativelylow concentration.

The i-type semiconductor layer AS functions as a channel region of thethin film transistor TFT, and the layers doped with the n-type impurityof relatively high concentration respectively function as a drain region(region at a side which is connected to the drain signal line DL) and asource region (region at a side which is connected to the pixelelectrode PX).

Further, the layers AS_(o) doped with the n-type impurity of relativelylow concentration function as layers which prevent a so-called drainavalanche hot carrier (DAHC) and are referred to as LDD (Lightly DopedDrain) regions. In these LDD regions, the electric field is alleviated,thus preventing the concentration of an electric current, whereby thereliability of the thin film transistor TFT can be enhanced.

Due to such a constitution, in this embodiment, the width L of the layerAS_(o) extending from the channel region to the drain region and thewidth L of the layer AS_(o) extending from the channel region to thesource region are set accurately to the same value. That is, when thewidth L is set to an excessively large value, the resistance of thesemiconductor layer AS is increased, while when the width L is set to anexcessively small value, concentration of the electric field occurs.

Further, the film thickness of the insulation film GI which covers thesemiconductor layer AS is set to approximately 100 nm (preferably notmore than 100 nm) right above the channel region, not more than 90 nmright above the layers AS_(o) which are doped with the n-type impurityhaving a small concentration, and not more than 80 nm, more preferablynot more than 60 nm, right above the drain region and the source region.

In other words, the insulation film GI is configured so that the filmthickness thereof is reduced in a step-like manner in the order of theportion thereof right above the channel region, the portion thereofright above the layers AS_(o) which are doped with the n-type impurityhaving the small concentration, and the portions thereof right above thedrain region and the source region, respectively.

Due to such a constitution, the film thickness of the insulation film GIright above the drain region and the source region becomes thinner thanthe film thickness of the insulation film GI right above the channelregion by not less than 20 nm, and more preferably by not less than 40nm.

This implies that the increase of areas occupied by tapers on the innersurfaces of the contact holes CH1, CH2 which are respectively formed inthe drain region and the source region for forming electrodes can beprevented. Accordingly, an advantageous effect is achieved in that thenumerical aperture of the pixel can be enhanced.

This advantageous effect becomes more apparent by setting the differencebetween the film thickness of the insulation film GI right above thelayers AS_(o) which are doped with the n-type impurity having the smallconcentration and the film thickness of the insulation film GI rightabove the drain and source regions to a value larger than the differencebetween the film thickness of the insulation film right above thechannel region and a film thickness of the insulation film right abovethe layers AS_(o) which are doped with the n-type impurity having thesmall concentration.

Further, with the provision of the insulation film GI having such aconstitution, the stepped portions formed in the vicinity of the gateelectrode GT are divided in two stages so that each step of each steppedportion becomes small, whereby an advantageous effect is achieved inthat the coverage of the interlayer insulation films LGI1, LGI2 can beenhanced.

Still further, this implies that the insulation films LGI1, LGI2 can beformed relatively flat. Accordingly, an advantageous effect is achievedin that the disconnection of the signal lines or electrodes formed overrespective interlayer insulation films LGI1, LGI2, which occurs due tothe presence of the steps can be obviated.

Here, in this embodiment, although the film thickness of the insulationfilm GI right above the channel region is set to not more than 100 nm,the film thickness of the insulation film GI right above the layersAS_(o) which are doped with the n-type impurity having the smallconcentration is set to not more than 90 nm, and the film thickness ofthe insulation film GI right above the drain region and the sourceregion is set to not more than 60 nm, it is needless to say that thesefilm thicknesses may be respectively set to not more than 80 nm, notmore than 70 nm, and not more than 40 nm.

Method of Fabricating a Thin Film Transistor

One example of a method of fabricating a thin film transistor will beexplained in conjunction with FIG. 4A to FIG. 4E.

Step 1. (FIG. 4A)

On the liquid-crystal-side surface of the transparent substrate SUB1, asemiconductor layer AS made of polysilicon, (p-Si), an insulation filmmade of SiO₂, for example, and a metal layer made of Cr or the like, forexample, are laminated sequentially.

Here, the insulation film is formed of a material which functions as thegate insulation film GI, and the metal layer is formed of a materialwhich functions as the gate electrode GT.

Further, although an insulation film having a relatively thick filmthickness is formed, it is preferable to set the film thickness to notmore than 100 nm. This is because the semiconductor layer AS made ofp-Si is formed as a layer below the insulation film, and a thermaloxidation film having a favorable quality such as single-crystal siliconcannot be formed so that only the insulation film which can be formed ata low temperature can be formed, whereby it is difficult to make thefilm thickness thin due to the characteristics of the insulation film.

Then, a photo resist film RE is formed over a surface of the metal layerby coating, for example.

Step 2. (FIG. 4B)

The photo resist film RE is selectively exposed using a photo mask MK.Light shielding films mk are formed over regions of the photo mask MKwhich correspond to the channel region and portions disposed at bothsides of the channel region of the thin film transistor TFT.

In this case, the light shielding film mk_(o) which corresponds to thechannel region of the thin film transistor TFT is formed such that thelight shielding film mk_(o) completely shields the light and the lightshielding films mk₁, which are disposed at both sides of the lightshielding film mk_(o) are formed in a mesh form, for example, so as topartially shield the light (hereinafter, such an exposure is referred toas “half exposure” for convenience sake).

Here, the light shielding films mk₁ are portions which correspond torespective LDD regions formed over the semiconductor layer AS and areformed to have a width equal to the width of respective LDD regions.

By developing the photo resist film RE, which is exposed using such aphoto mask MK, the photo resist film RE remains on the channel regionand the regions which are disposed at both sides of the thin filmtransistor TFT, while the photo resist film RE is removed on otherregions.

In this case, the remaining photo resist film RE exhibits a thick filmthickness on the channel region and a thin film thickness on the regionscorresponding to both sides of the channel region.

Step 3. (FIG. 4C)

Using the remaining photo resist film RE as a mask, the metal layerexposed from the mask is selectively etched so that the insulation filmGI is exposed. In this case, the surface of the insulation film GI isslightly etched so that the film thickness of the exposed insulationfilm GI becomes slightly smaller than the film thickness of theinsulation film GI below the mask.

Further, the ion implantation of the n-type impurity of highconcentration is performed with the mask which remains. Due to such anion implantation, ions of high concentration are implanted into thesemiconductor layer AS below the insulation film at regions other thanregions where the mask is formed so that the drain and source regionsare formed.

Here, since the insulation film GI, which functions as a through filmfor ions at the time of the ion implantation, has a film thickness ofnot more than 100 nm, the acceleration voltage for the ion implantationcan be lowered. Accordingly, the damage which the insulation film GIreceives as the through film can be suppressed as much as possiblewhereby the subsequent activation can be performed easily.

Step 4. (FIG. 4D)

By ashing the remaining photo resist film RE, the surface thereof isremoved while retaining a portion thereof. That is, the ashing processis performed until the photo resist film RE having a large filmthickness remains on the channel region, and the photo resist film REhaving a small film thickness that is formed at both sides of the photoresist film RE having a large film thickness is removed.

Step 5. (FIG. 4E)

Using the remaining photo resist film RE as a mask, the metal layerexposed from the mask is etched so that the gate electrode GT is formedand, at the same time, the insulation film GI at both sides of thechannel region is exposed.

In this case, the surface of the insulation film GI is slightly etchedand the film thickness of the exposed insulation film GI is made smallerthan the film thickness of the insulation film GI below the mask. Inthis case, the insulation film GI on the drain and source regions hasthe surface thereof also slightly etched in the same manner.

Further, the ion implantation of the n-type impurity of lowconcentration is performed with the mask that remains. Due to such anion implantation, ions of low concentration are implanted into thesemiconductor layer below the insulation film at regions other thanregions where the mask is formed so that the LDD regions are formed.

Here, since the insulation film GI, which functions as a through filmfor ions at the time of the ion implantation, has a film thickness ofnot more than 100 nm, the acceleration voltage for the ion implantationcan be lowered. Accordingly, the damage which the insulation film GIreceives as the through film can be suppressed as much as possible,whereby the subsequent activation can be performed easily.

Other Fabricating Method

FIG. 5A to FIG. 5D are process flow diagrams showing another embodimentof the method of fabrication of thin film transistors similar to themethod shown in FIG. 4A to FIG. 4E.

In the drawings, steps of this fabricating method are the same as thoseof the fabricating method shown in FIG. 4A to FIG. 4E except for theformation of the photo resist film RE which is used at the time offorming the metal layer which is used as the gate electrode GT.

As shown in FIG. 5B, first of all, although the metal layer is allowedto remain on the channel region and the portions disposed at both sidesof the channel region of the thin film transistor TFT, the photo resistfilm RE which works as the mask is formed as a film having a uniformthickness.

With respect to the photo resist film RE which is allowed to remain inthis manner, the metal layer exposed from the photo resist film RE isetched and the semiconductor layer AS is doped with the n-type impurityof high concentration so that the drain and the source regions areformed.

Then, using the photo resist film RE as a mask, the metal film which isexposed from the mask is etched and, thereafter, the photo resist filmRE is subjected to an ashing process.

Accordingly, the photo resist film RE is allowed to remain on thechannel region, while the photo resist film RE is removed at theportions disposed at both sides of the channel region. In this case, theremaining photo resist film RE exhibits a pattern indicated by a solidline in FIG. 7 (the pattern being similar to a pattern of the gateelectrode GT). In FIG. 7, a pattern indicated by a dotted line is apattern before the photo resist film is subjected to the ashing process.In this manner, the gate electrode GT of the thin film transistor TFTformed according to this embodiment is eventually formed to have a roundshape at the end thereof.

With respect to the photo resist film RE which is allowed to remain inthis manner, the metal layer which is exposed from the photo resist filmRE is etched and the semiconductor layer AS is doped with the n-typeimpurity of low concentration.

Fabricating Method of Complementary Thin Film Transistor

The thin film transistor TFT in the above-mentioned embodiment is thethin film transistor TFT formed in the pixel region. However, thescanning driving circuit V or the video driving circuit He, which isformed in the periphery of the liquid crystal display part as shown inFIG. 2, is also formed of a large number of thin film transistors TFT.Accordingly, it is needless to say that the present invention is alsoapplicable to formation of these thin film transistors TFT.

In this case, as the thin film transistors TFT which form each drivingcircuit, the thin film transistors of a complementary type consisting ofa p-channel type transistor and an n-channel type transistor arepopularly used; and, hence, one embodiment of the method of fabricatingthe complementary type thin film transistors TFT will be explained inconjunction with FIG. 6A to FIG. 6F.

Step 1. (FIG. 6A)

First of all, since it is unnecessary for the p-type thin filmtransistor TFT, which constitutes one of the complementary type thinfilm transistors TFT which are arranged adjacent to each other to formthe LDD regions, after forming the gate electrode, the p-type impurityof high concentration is implanted into the semiconductor layer AS usingthe gate electrode as a mask. In this case, the region where n-type thinfilm transistor TFT is formed is a region which is formed bysequentially laminating the semiconductor layer AS made of polysilicon,the insulation film GI and the metal layer GT from the substrate SUB1side.

Step 2. (FIG. 6B)

The photo resist film RE is formed over the entire surface of thetransparent substrate SUB1 by coating, for example. Step 3. (FIG. 6C)

The photo resist film RE is selectively exposed using the photo mask. Inthis case, the whole area of the region where the p-type thin filmtransistor TFT is formed is fully shielded from light such that thephoto resist film remains on the whole area of the region where thep-type thin film transistor TFT is formed, while the region where then-type thin film transistor TFT is formed is selectively exposed.

The exposure at the region where the n-type thin film transistor TFT isformed is the above-mentioned half exposure. Accordingly, by developingthe photo resist film RE thereafter, the photo resist film RE is formedsuch that the photo resist film RE has a large film thickness on thechannel region and a thin film thickness on the portions disposed atboth sides of the channel region.

Step 4. (FIG. 6D)

Using the remaining photo resist film RE as a mask, the metal layer GTwhich is exposed from the mask is selectively etched so that theinsulation film GI is exposed. In this case, the exposed insulation filmGI has a surface that is slightly etched and has a film thicknesssmaller than that of the insulation film below the mask.

Step 5. (FIG. 6E)

Further, the ion implantation of the n-type impurity of highconcentration is performed in the state in which the mask remains.Accordingly, at portions other than the region where the mask is formed,ions of n-type impurity of high concentration are implanted into thesemiconductor layer below the insulation film GI so that the drain andsource regions are formed.

By ashing the remaining photo resist film, the surface of the photoresist film is removed, while a portion of the surface is allowed toremain. That is, the ashing process is performed until the remainingphoto resist film currently remaining on the channel region having alarge film thickness is allowed to remain, and the remaining photoresist film currently remaining on the portions disposed at both sidesof the channel region having a small film thickness is removed.

Using the remaining photo resist film as a mask, the metal layer whichis exposed from the mask is etched to form the gate electrode GT.Accordingly, the insulation film GI is exposed and the surface of theexposed insulation film GI is slightly etched to have a film thicknesssmaller than a film thickness of the insulation film GI below the mask.

Step 6. (FIG. 6F)

Further, the ion implantation of the n-type impurity of lowconcentration is performed in the state in which the mask remains.Accordingly, at portions other than the region where the mask is formed,the p-type impurity of low concentration is implanted into thesemiconductor layer AS below the insulation film GI. Other structure ofthin film transistor TFT and forming method thereof

In the above-mentioned thin film transistor TFT, the LDD regions areformed at both sides of the channel region such that the channel regionis sandwiched by the LDD regions. However, it is needless to say thatthe LDD regions may be constituted at region sides into which thecurrent flows (for example, the drain region sides).

Also, in this case, as can be explicitly understood from the processflow steps shown in FIG. 8A to FIG. 8D, the above-mentioned advantageouseffect can be obtained by employing half exposure in the formation ofthe gate electrode.

FIG. 9A and FIG. 9B show subsequent steps which follow theabove-mentioned TFT fabricating process. After removing the resistremaining in a channel form, the interlayer insulation film, which ismade of silicon oxide or the like, is formed over the source/drainregions and the gate electrode. Although the invention is not solimited, it is preferable that the film thickness of the interlayerinsulation film is not less than 400 nm. After forming the interlayerinsulation film, first of all, dry etching (anisotropic etching) isperformed so as to form holes having a depth reaching the mid portion ofthe interlayer insulation film.

Then, wet etching (isotropic etching) is performed to grow the holes tothe source/drain region to form the contact holes. Accordingly, theinclination of lower portions of the contact holes becomes gentler thanthe inclination of upper portions of the contact holes. Thereafter, aconductive material, such as metal, is filled in the contact holes bydeposition or the like, thus establishing contact with the source/drainregions. Accordingly, it is possible to connect the source/drain regionswith video signal lines or pixel electrodes.

Here, the contact holes are formed by performing dry etching first andthen performing wet etching so that the regions where the contact holesare formed can be narrowed compared to a case in which the contact holesare formed only by wet etching. Accordingly, it is possible to increasethe numerical aperture in the display region of the liquid crystaldisplay device, while it is possible to enhance the integrity of thethin film transistors TFT with respect to the peripheral region of theliquid crystal display device or a display device other than the liquidcrystal display device.

In the above-mentioned explanation, the holes are formed to a depthwhich reaches the mid portion of the interlayer insulation film by thefirst dry etching. However, in the formation of the holes by dryetching, the hole may reach a position around a boundary between theinterlayer insulation film and the gate insulation film GI or the middleportion of the gate insulation film. That is, the inclination of theside surfaces of the contact holes is changed at a position around theboundary between the interlayer insulation film and the gate insulationfilm.

By performing the formation of the holes using dry etching such thatholes reach a position near the source/drain regions, the regions wherethe contact holes are formed can be further narrowed. However, thecontrol of dry etching becomes strict. Accordingly, it is advantageousto change the proportions of dry etching and wet etching by taking therestriction on the area of the contact regions and the accuracy of dryetching into consideration.

FIG. 10A and FIG. 10B show a constitution which allows the formation ofcontact holes using only dry etching. Due to such a constitution, it ispossible to further narrow the regions of the contact holes compared tothe constitution shown in FIG. 9A and FIG. 9B. However, when the contactholes are formed using only dry etching, the source/drain regions madeat polysilicon are also etched by dry etching. Accordingly, beforeforming the interlayer insulation film, portions of the gate insulationfilm over the source/drain regions are removed and metal films areformed over the portion other than the removed portions. After formingthe metal films, the interlayer insulation film is formed; and,thereafter, the interlayer insulation film disposed at the regions wherethe metal films are formed is removed by dry etching. Accordingly, themetal films form block layers for dry etching, so that the source/drainregions are prevented from being etched.

In the constitution shown in FIG. 11, before performing theaboveumentioned series of steps, metal films are formed at portionswhere contacts of the source/drains are formed. That is, metal films areformed over the substrate, polysilicon films are formed over upperportions of the metal films, and thereafter, the source/drain regionsare formed by performing the above-mentioned steps to form theinterlayer insulation film. Thereafter, the interlayer insulation filmand the gate insulation film on the source/drain regions are etched bydry etching. Here, the polysilicon films on the source/drain regions aresimultaneously etched by dry etching and, eventually, the holes areformed in the interlayer insulation film, the gate insulation film andthe polysilicon films. In this state, by filling the conductivematerial, such as metal, into the contact holes, the source/drainregions are electrically connected with the conductive material in thecontact holes through a metal layer formed as a layer disposed below thepolysilicon film.

In the above-mentioned constitutions shown in FIG. 10A, FIG. 10B andFIG. 11, it is necessary to form metal layers on upper surfaces or lowersurfaces of the source/drain regions, and hence, the number of steps isincreased. However, since the contact holes can be formed only by dryetching, the contact regions can be further narrowed.

FIG. 12A to FIG. 12G show another embodiment in which the contact holesof the source/drains are formed only by dry etching. The LDD structuresare formed by forming side walls on side surfaces of the gate electrode,and thereafter, a metal film and an interlayer insulation film areformed over the source/drain regions and the gate electrode, and then,the interlayer insulation film is etched by dry etching, thusestablishing the contact with the source/drain regions.

In such a constitution, the metal film which constitutes an etching stoplayer is formed over the source/drain regions, so that polysilicon whichforms the source/drain regions can be prevented from being etched.

In applying this technical concept to the method of fabricating a thinfilm transistor, which has been explained in conjunction with FIG. 4A toFIG. 4E, at the time of removing the gate electrodes other than thechannel region by etching to implant ihe ions of low concentration, thegate insulation film over the region to which the ions of highconcentration have been implanted is also removed. Thereafter, afterimplanting the ions of low concentration, a metal film is formed overthe source/drain regions and the gate electrode. Then, an interlayerinsulation film is formed over the whole surface of the source/drainelectrode and contact holes are formed by dry etching.

In such a constitution, since the metal film is formed over thesource/drain regions, there is no possibility that the polysilicon ofthe source/drain regions is also etched by dry etching. Here, however,it is necessary to deposit the metal film with a thickness which canprevent the short-circuiting of the gate electrode and the source/drainregions through the metal film. Further, at the time of implanting ionsof low concentration, since the gate insulation film which constitutes athrough film is not present over the source/drain regions, there stillremains the possibility that the impurity is also introduced into thepolysilicon. Accordingly, provided that the gate electrode and thesource/drain regions are not short-circuited to each other and thepossibility of introduction of the impurity to the polysilicon is or isallowed to be low, by adopting this constitution, the steps can besimplified and, at the same time, the contact regions can be narrowed.It is needless to say that the above-mentioned constitution isapplicable to the constitutions shown in FIG. 5A to FIG. 5D, FIG. 6A toFIG. 6F and FIG. 8A to FIG. 8D.

FIG. 6A to FIG. 6F show steps in which the gate electrodes of the p-typethin film transistor and the n-type thin film transistor are formedfirst, and then, the source/drain regions of the p-type thin filmtransistor are formed, and then n-type thin film transistor is formed.However, the present invention is not limited to such steps. Forexample, it may be possible to adopt steps in which, at the time offirst forming the gate electrode of the n-type thin film transistorhaving the LDD structures, the gate electrode of the p-type thin filmtransistor is simultaneously formed; and, thereafter, the p-type thinfilm transistor may be formed by masking the n-type thin film transistorportion in which the source/drain regions are formed by the ionimplantation. In this case, although phosphorus is also implanted intothe regions which constitute the source/drain regions of the p-type thinfilm transistor, by masking the n-type thin film transistor afterforming the n-type thin film transistor and implanting boron into thesource/drain region of the p-type thin film transistor by an amount thatis twice as much as the amount of phosphorus, the p-type thin filmtransistor can be realized. Here, although the order of forming then-type thin film transistor and the p-type thin film transistor may bereversed, since the source/drains implanted with boron in an amountlarger than phosphorus is liable to be activated, it is preferable toform the p-type thin film transistor after forming the n-type thin filmtransistor.

In the above-mentioned explanation of the half exposure processing,although the light shielding film formed over the photo mask is formedto have a mesh shape, the shape of the light shielding film is notspecifically limited. Accordingly, the light shielding film in a stripeshape may be used and any constitution is applicable, so long as thelight shielding film constitutes a photo mask which can form portionswhich are exposed to an intermediate level between the completelyexposed level and the completely non-exposed level.

Further, in the above-mentioned fabricating steps in the formation ofthe thin film transistor, there has been disclosed a case in which,after forming the regions which are implanted with the ions of highconcentration in the source/drain regions, resist having a large filmthickness is allowed to remain over the channel forming region, andresist films of a small film thickness disposed at the sides of thechannel forming region are subjected to an ashing process. However, itmay be possible to implant the ions after performing the ashing process.In this case, since the resist is subjected to the ashing process beforethe resist is hardened by the ion implantation, it is possible toenhance the accuracy of the retraction of the resist.

With respect to the above-mentioned explanation of steps shown in FIG.5A to FIG. 5D, the following explanation may conform to the drawingsmore precisely. That is, the ions of high concentration are implanted inthe state shown in FIG. 5B, and, thereafter, the resist is subjected tothe ashing process such that the width of the resist becomes the widthof the channel region of the thin film transistor, as shown in FIG. 5C,the metal film is etched using the remaining resist as a mask, and ionsof low concentration are implanted after the metal film is etched, asshown in FIG. 5D. It is needless to say that the order of theimplantation of the ions of high concentration and the ashing of theresist which allows the channel region to remain can be reversed.

Heretofore, although the invention has been explained in thisspecification based on a thin film transistor of the type used in ageneral liquid crystal display device having the constitution in whichthe pixel electrodes are formed over one substrate and the counterelectrode is formed over the other substrate, the present invention isalso applicable to a thin film transistor for use in a liquid crystaldisplay device of the transverse electric field type (IPS) which formspixel electrodes and a counter electrode in one substrate and drivesliquid crystal in the direction parallel to the substrate. It isneedless to say that the present invention is also applicable to a thinfilm transistor adopted by an organic EL display device or the likewhich uses electro-luminescence. Further, in the above-mentioned displaydevice, it is possible to apply the present invention to only one groupof thin film transistors out of a group of thin film transistorsprovided in the display region and a group of thin film transistorsprovided in the peripheral region around the display region. Further,although in the above-mentioned explanation a display device isconsidered in which the peripheral circuit region is constituted ofcomplementary thin film transistors and the pixel regions areconstituted of single-conductive-type thin film transistors, the presentinvention is not specifically limited to such a display device. That is,the present invention is applicable to a display device in which aperipheral region thereof is constituted of only either p-type or n-typethin film transistors. Further, the present invention is applicable to adisplay device in which a display region thereof is constituted ofp-type and n-type conductive thin film transistors.

As can be clearly understood from the above-mentioned explanation,according to the display device of the present invention, the numericalaperture can be enhanced, and drawbacks which may be caused by steppedportions formed in the periphery of the gate electrode of the thin filmtransistor can be solved.

Further, according to the method of fabricating the display device ofthe present invention, the voltage for performing the ion implantationof an impurity at the time of forming the thin film transistor can bereduced.

1. A display device comprising: an insulation substrate, a semiconductorlayer formed over the substrate, and comprising a channel region, sourceregion and drain region. an insulation film formed on the channelregion, source region and the drain region, and a gate electrode formedon the insulation film, wherein at least one LDD region is formedbetween the channel region and the source region, or between the channelregion and the drain region, and wherein the insulation film has a firstthickness on the channel region, a second thickness on the LDD region,and a third thickness on the source region or the drain region, thefirst thickness being greater than the second thickness, and the secondthickness being greater than the third thickness.
 2. A display deviceaccording to claim 1, wherein the LDD region is formed between thechannel region and the source region, and between the channel region andthe drain region.
 3. A display device according to claim 2, wherein thethird thickness is not more than 80 nm.
 4. A display device according toclaim 3, wherein the second thickness is not more than 90 nm.
 5. Adisplay device according to claim 4, wherein the first thickness is notmore than 100 nm.
 6. A display device according to claim 2, wherein thethird thickness is thinner than the first thickness by not less than 20nm.
 7. A display device according to claim 2, wherein the differencebetween the second thickness and the third thickness is larger than thedifference between the first thickness and the second thickness.
 8. Adisplay device according to claim 1, wherein the semiconductor iscomprised of polysilicon.
 9. A display device according to claim 8,wherein the LDD region is formed between the channel region and thesource region, and between the channel region and the drain region. 10.A display device according to claim 8, wherein the third thickness isnot more than 80 nm.
 11. A display device according to claim 8, whereinthe second thickness is not more than 90 nm.
 12. A display deviceaccording to claim 8, wherein the first thickness is not more than 100nm.
 13. A display device according to claim 8, wherein the thirdthickness is thinner than the first thickness by not less than 20 nm.14. A display device according to claim 8, wherein the differencebetween the second thickness and the third thickness is larger than thedifference between the first thickness and the second thickness.
 15. Amanufacturing method of a display device comprising: a first step offorming a semiconductor layer, an insulation film on the semiconductorlayer, and a metal layer on the insulation film, a second step ofetching the metal layer and a surface of the insulation film, a thirdstep of implanting ions of high concentration in the semiconductorlayer, a fourth step of etching the metal layer and a surface of theinsulation film, and a fifth step of implanting ions of lowconcentration in the semiconductor layer to form at least one LDD regionin the semiconductor region.
 16. A manufacturing method of claim 15,wherein the etching of the second step uses a first remained photoresist film, and wherein the etching of the fourth step uses a secondremained photo resist film.
 17. A manufacturing method of claim 16,wherein the second remained photo resist film is formed from the firstremained photo resist film.
 18. A manufacturing method of claim 17,wherein the first remained photo resist film comprises a first portionhaving a first thickness and a second portion having a second thicknesswhich is thinner than the first thickness, and wherein, after the secondstep, the second portion and a surface of the first portion are removed,and the second remained photo resist film is a remained portion of thefirst portion of the first remained photo resist film.
 19. Amanufacturing method of claim 18 comprising, wherein the first photoresist film is formed by a half exposure photo mask.
 20. A manufacturingmethod of a display device comprising: a first step of forming asemiconductor layer, an insulation film on the semiconductor layer, anda metal layer on the insulation film, a second step of etching the metallayer and a surface of the insulation film using a first remained photoresist film, a third step of implanting ions of high concentration tothe semiconductor layer, a fourth step of etching the metal layer and asurface of the insulation film using a second remained photo resistfilm, and a fifth step of implanting ions of low concentration in thesemiconductor layer to form at least one LDD region in the semiconductorregion, wherein the first remained photo resist film comprises a firstportion having a first thickness and a second portion having a secondthickness which is thinner than the first thickness, and wherein, afterthe second step, the second portion and a surface of the first portionare removed, and the second remained photo resist film is a remainedportion of the first portion of the first remained photo resist film.